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Highly-ordered Triptycene Modifier Layer Based on Blade Coating for Ultraflexible Organic Transistors

机译:基于叶片涂层的超柔性有机晶体管的高序三茂铁改性剂层

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摘要

We present a highly ordered surface modification layer for polymers based on ambient solution-processed triptycene (Trip) derivatives for high-mobility organic thin-film transistors (OTFTs). The nested packing of Trip molecules results in the formation of 2D hexagonal arrays, which stack one-dimensionally on the surface of polymer dielectrics without anchoring groups. The Trip surface was previously shown to be preferable for the growth of organic semiconductors (OSCs), and hence for enhancing the mobility of OTFTs. However, although the Trip modifier layer has been realized by thermal evaporation in a high-vacuum environment (TVE), it still has grain-boundary disorders that hinder the optimal growth of OSCs. To fabricate OTFTs with higher mobility, a disorder-free Trip layer is needed. We developed highly ordered Trip layers on polymer dielectrics via blade coating. In addition, we clarified that the highly ordered Trip modifier layer enhances the mobility of the OTFTs by more than 40%, relative to the disordered Trip layer prepared by TVE. Finally, we realized a ring oscillator composed of OTFTs with a highly ordered Trip layer.
机译:我们针对高迁移率有机薄膜晶体管(OTFT)提出了一种基于环境溶液处理的三茂(Trip)衍生物的聚合物高阶表面改性层。 Trip分子的嵌套堆积导致形成二维六边形阵列,该二维六边形阵列一维堆积在聚合物电介质的表面上而没有锚定基团。先前显示,Trip表面对于有机半导体(OSC)的生长是优选的,因此对于提高OTFT的迁移率来说是优选的。但是,尽管脱扣改性剂层是通过在高真空环境(TVE)中通过热蒸发实现的,但它仍然具有阻碍OSC最佳生长的晶界紊乱。为了制造具有更高迁移率的OTFT,需要无障碍的Trip层。我们通过刀片涂层在聚合物电介质上开发了高度有序的脱扣层。此外,我们明确指出,相对于TVE制备的无序Trip层,高度有序的Trip改性剂层将OTFT的迁移率提高了40%以上。最终,我们实现了一个由OTFT组成的环形振荡器,具有高度有序的Trip层。

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