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Wafer-scale fabrication of high-aspect ratio nanochannels based on edge-lithography technique

机译:基于边缘光刻技术的高纵横比纳米通道的晶圆级制备

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摘要

This paper introduced a wafer-scale fabrication approach for the preparation of nanochannels with high-aspect ratio (the ratio of the channel depth to its width). Edge lithography was used to pattern nanogaps in an aluminum film, which was functioned as deep reactive ion etching mask thereafter to form the nanochannel. Nanochannels with aspect ratio up to 172 and width down to 44 nm were successfully fabricated on a 4-inch Si wafer with width nonuniformity less than 13.6%. A microfluidic chip integrated with nanometer-sized filters was successfully fabricated by utilizing the present method for geometric-controllable nanoparticle packing.
机译:本文介绍了一种晶片级制造方法,用于制备高纵横比(沟道深度与宽度之比)的纳米通道。边缘平版印刷术用于在铝膜中对纳米间隙进行构图,然后将其用作深反应离子蚀刻掩模,以形成纳米通道。在宽度不均匀度小于13.6%的4英寸Si晶圆上成功制造出宽高比高达172,宽度小于44 nm的纳米通道。利用本发明的几何可控制的纳米颗粒堆积的方法,成功地制备了与纳米级过滤器集成的微流控芯片。

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