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Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

机译:将CNT薄膜主动真空钎焊到金属基板上以实现出色的电子场发射性能

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摘要

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag–Cu–Ti alloy and at 880 °C with a Cu–Sn–Ti–Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm−1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.
机译:垂直取向的多壁碳纳米管(CNTs)宏观薄膜与钛基底的结合通过Ag-Cu-Ti合金在820°C和Cu-Sn-Ti-Zr合金在880°C的主动真空钎焊得到证明。详细阐述了钎焊方法,以便能够生产出高导电性和导热性的CNT /金属基板触点。测得的接头的界面电阻低至0.35Ω。与成膜后的膜相比,钎焊膜中改善的界面传输性能可导致优异的电子场发射性能。在0.6 Vμm -1 的施加电场下,从钎焊的纳米管汲取了150μA的发射电流。电子场发射的改善主要归因于纳米管与基板之间的接触电阻的降低。接头具有很高的重熔温度,最高可达到合金的固相线温度。远远超过了标准焊料所能达到的水平,从而将CNT薄膜的应用潜力扩展到了预计会有大量摩擦或电阻加热的大电流和大功率应用中。

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