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Transparent Nanotubular TiO2 Photoanodes Grown Directly on FTO Substrates

机译:直接在FTO基板上生长的透明纳米管TiO2光电阳极

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摘要

This work describes the preparation of transparent TiO2 nanotube (TNT) arrays on fluorine-doped tin oxide (FTO) substrates. An optimized electrolyte composition (0.2 mol dm−3 NH4F and 4 mol dm−3 H2O in ethylene glycol) was used for the anodization of Ti films with different thicknesses (from 100 to 1300 nm) sputtered on the FTO glass substrates. For Ti thicknesses 600 nm and higher, anodization resulted in the formation of TNT arrays with an outer nanotube diameter around 180 nm and a wall thickness around 45 nm, while for anodized Ti thicknesses of 100 nm, the produced nanotubes were not well defined. The transmittance in the visible region (λ = 500 nm) varied from 90% for the thinnest TNT array to 65% for the thickest TNT array. For the fabrication of transparent TNT arrays by anodization, the optimal Ti thickness on FTO was around 1000 nm. Such fabricated TNT arrays with a length of 2500 nm exhibit stable photocurrent densities in aqueous electrolytes (~300 µA cm−2 at potential 0.5 V vs. Ag/AgCl). The stability of the photocurrent response and a sufficient transparency (≥65%) enables the use of transparent TNT arrays in photoelectrochemical applications when the illumination from the support/semiconductor interface is a necessary condition and the transmitted light can be used for another purpose (photocathode or photochemical reaction in the electrolyte).
机译:这项工作描述了在掺氟氧化锡(FTO)衬底上制备透明TiO2纳米管(TNT)阵列。优化的电解液成分(乙二醇中0.2 mol dm -3 NH4F和4 mol dm -3 H2O)用于阳极氧化不同厚度的Ti膜(从100到1300 nm)。对于厚度为600 nm或更高的Ti,阳极氧化导致形成TNT阵列,其外纳米管直径约为180 nm,壁厚约为45 nm,而对于阳极氧化的Ti厚度为100 nm,则无法很好地定义生产的纳米管。可见光区域(λ= 500 nm)的透射率从最薄的TNT阵列的90%到最厚的TNT阵列的65%不等。对于通过阳极氧化制造透明TNT阵列,FTO上的最佳Ti厚度约为1000 nm。这样制成的长度为2500 nm的TNT阵列在水性电解质中表现出稳定的光电流密度(相对于Ag / AgCl,电位为0.5 V时约为300 µA cm -2 )。当来自支撑体/半导体界面的照明是必要条件并且透射光可用于其他目的时,光电流响应的稳定性和足够的透明度(≥65%)可在光电化学应用中使用透明TNT阵列,并且透射光可用于其他目的(光电阴极)或电解质中的光化学反应)。

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