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Coverage Dependent Variation of the Adsorption Structure of 2-Thiophenecarboxaldehyde on the Ge(100)-2 × 1 Reconstructed Surface

机译:Ge(100)-2×1重构表面上2-噻吩甲醛的吸附结构的覆盖率依赖性变化

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摘要

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were performed to track the exposure-dependent variation of the adsorption structure of 2-thiophenecarboxaldehyde (C4H3SCHO: TPCA) on the Ge(100) 2 × 1 reconstructed surface at room temperature. In an effort to identify the most probable adsorption structures on the Ge(100)-2 × 1 reconstructed surface, we deposited TPCA molecules at low exposure and at high exposure and compared the differences between the electronic features measured using HRPES. The HRPES data suggested three possible adsorption structures of TPCA on the Ge(100)-2 × 1 reconstructed surface, and DFT calculations were used to determine the plausibility of these structures. HRPES analysis corroborated by DFT calculations, indicated that an S-dative bonded structure is the most probable adsorption structure at relatively low exposure levels, the [4 + 2] cycloadduct structure is the second most probable structure, and the [2 + 2]-C=O cycloadduct structure is the least probable structure on the Ge(100)-2 × 1 reconstructed surface at relatively high exposure levels.
机译:收集高分辨率光发射光谱(HRPES)测量并进行密度泛函理论(DFT)计算以跟踪2-噻吩甲醛(C4H3SCHO:TPCA)在Ge(100)2×1上的吸附结构的依赖于曝光的变化。在室温下重建表面。为了确定Ge(100)-2×1重建表面上最可能的吸附结构,我们在低曝光和高曝光条件下沉积了TPCA分子,并比较了使用HRPES测量的电子特征之间的差异。 HRPES数据表明,TPCA在Ge(100)-2×1重建表面上可能存在三种吸附结构,并通过DFT计算确定了这些结构的合理性。通过DFT计算证实的HRPES分析表明,在相对较低的暴露水平下,S-键合结构是最可能的吸附结构,[4 + 2]环加合物结构是第二最可能的结构,而[2 + 2]- C = O环加合物结构是Ge(100)-2×1重构表面上相对高曝光水平下最不可能的结构。

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