First principles studies on the adsorption of unsaturated organic molecules on reconstructed p(2x2) silicon(100) surface.

摘要

The adsorption of unsaturated organic molecules on reconstructed Si(100) surface is widely applied in the modification and functionalization of silicon surface to design new semiconductor materials. The present project is devoted to explore the adsorption mechanisms and the related properties of adsorption species for unsaturated organic molecules: acetylene (C2H 2), ethylene (C2H4), vinyl bromide (C2H 3Br) and styrene (C8H8) by quantum chemical calculation, based on density functional theory (DFT) method with pseudopotentials and plane wave basis set.;The reaction processes for acetylene (C2H2) and ethylene (C2H4) chemisorption on the surface silicon dimer and the sub-layer silicon atoms are compared. Acetylene can undergo a new type of cycloaddition on sub-layer Si atoms (called sub-di-sigma) with no barrier, which is identified by ab initio Molecular Dynamics. The related properties including vibrational frequencies and STM images are calculated and found to be similar with those of the end-bridge adsorption structure. The identification of such a sub-di-sigma adsorption structure explains the discrepancy between STM experiments and theoretical calculations. In addition, the analysis of calculated vibrational frequencies, simulated STM images and the reaction barriers for di-sigma and end-bridge structures indicate that inter-dimer reaction for C2H4 is possible.;The investigation of vinyl bromide (C2H3Br) chemisorption on Si(100) resolves the conflicting conclusions between previous experimental and theoretical studies. The orientation of the vinyl bromide molecule relative to the titled silicon dimer is found to be an important factor for both the stability and reactivity of the precursor state. A new precursor pi-complex is identified, which is metastable and trapped by barriers around 0.1eV. Comparisons between theoretical and experimental vibrational frequencies support the conclusion that such a pi-complex is present on the surface at very low temperature. Careful analysis on the electronic structure also demonstrates that it is indeed a pi-complex rather than a diradical as previously suggested. Reaction mechanisms at higher vinyl bromide coverage are also modeled to explain the decrease in activation barrier observed in experiments.;Styrene (C2H3-C6H5) is expected to have a more complex reaction process due to active reaction sites located in both vinyl group and phenyl group. Our exploration indicates that the adsorption products are coverage dependent. At low coverage, both vinyl group and phenyl group are possible to take part in the adsorption process. A new AsymT adsorption state covered two adjacent Si dimers is identified through two [4+2] cycloaddition. At high coverage, only vinyl group can interact with Si dimer to form cis and trans stereoisomers with different thermal energies and kinetic reaction barriers. STM images and vibrational frequencies are also explored to further support the experimental observations.