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SF6 Optimized O2 Plasma Etching of Parylene C

机译:SF6优化的对二甲苯C的O2等离子体蚀刻

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摘要

Parylene C is a widely used polymer material in microfabrication because of its excellent properties such as chemical inertness, biocompatibility and flexibility. It has been commonly adopted as a structural material for a variety of microfluidics and bio-MEMS (micro-electro-mechanical system) applications. However, it is still difficult to achieve a controllable Parylene C pattern, especially on film thicker than a couple of micrometers. Here, we proposed an SF6 optimized O2 plasma etching (SOOE) of Parylene C, with titanium as the etching mask. Without the SF6, noticeable nanoforest residuals were found on the O2 plasma etched Parylene C film, which was supposed to arise from the micro-masking effect of the sputtered titanium metal mask. By introducing a 5-sccm SF6 flow, the residuals were effectively removed during the O2 plasma etching. This optimized etching strategy achieved a 10 μm-thick Parylene C etching with the feature size down to 2 μm. The advanced SOOE recipes will further facilitate the controllable fabrication of Parylene C microstructures for broader applications.
机译:聚对二甲苯C因其优异的性能(如化学惰性,生物相容性和柔韧性)而在微细加工中被广泛使用。它已被普遍用作各种微流体和生物MEMS(微机电系统)应用的结构材料。然而,仍然难以获得可控的聚对二甲苯C图案,尤其是在厚度大于几微米的膜上。在这里,我们提出了以聚对二甲苯C的SF6优化O2等离子体蚀刻(SOOE),以钛为蚀刻掩模。没有SF6,在O2等离子体蚀刻的Parylene C膜上会发现明显的纳米森林残留物,这可能是由于溅射的钛金属掩模的微掩模效应引起的。通过引入5-sccm SF6流,可以在O2等离子体蚀刻过程中有效去除残留物。这种优化的蚀刻策略实现了特征尺寸小至2μm的10μm厚的Parylene C蚀刻。先进的SOOE配方将进一步促进可控的Parylene C微结构的制造,以实现更广泛的应用。

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