Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga

摘要

In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 10⁶, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 10⁴. IGO TFTs may act as photodetectors according to the results obtained for optical properties.