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Al-Doped ZnO Monolayer as a Promising Transparent Electrode Material: A First-Principles Study

机译:铝掺杂ZnO单层作为有希望的透明电极材料:原理的研究

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摘要

Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.
机译:铝掺杂的ZnO作为透明电极已经引起了广泛的关注。与块状ZnO相比,作为二维纳米结构材料的类石墨烯ZnO单层显示出卓越的性能。在这里,通过第一性原理计算,我们发现,与本体对应物相比,掺Al的ZnO单层可见光区域的透明度显着提高。特别地,12.5at%的Al掺杂的ZnO单层表现出高于99%的最高可见光透射率。此外,由于Al掺杂的结果,ZnO单层的电导率提高了,Al掺杂也发生在本体系统中。我们的结果表明,掺铝的ZnO单层是用于纳米级光电器件应用的有希望的透明导电电极。

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