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Excitonic Emissionof Monolayer Semiconductors Near-FieldCoupled to High-Q Microresonators

机译:激子发射单层半导体近场技术耦合至高Q微谐振器

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摘要

We present quantum yield measurements of single layer WSe2 (1L-WSe2) integrated with high-Q (Q > 106) optical microdisk cavities, using an efficient (η > 90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe2 in the evanescent cavity field. This preserves the microresonator high intrinsic quality factor (Q > 106) below the bandgap of 1L-WSe2. The cavity quantum yield is QYc ≈ 10–3, consistent with operation in the broad emitter regime (i.e., the emission lifetime of 1L-WSe2 is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.
机译:我们介绍了一种单层WSe2(1L-WSe2)与高Q(Q> 10 6 )光学微盘腔集成的量子产率测量结果,采用了一种有效的(η> 90%)近场耦合方案基于锥形光纤。激子发射的耦合是通过将1L-WSe2置于van逝腔场中来实现的。这样可将微谐振器的固有特性因子(Q> 10 6 )保持在1L-WSe2的带隙以下。腔量子产率为QYc≈10 –3 ,与在宽发射体范围内的操作一致(即1L-WSe2的发射寿命明显短于裸腔衰减时间)。该方案可以用作在平面内和平面外激励下将层状材料激子发射到腔模中的精确测量工具。

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