DONOR-ACCEPTOR INTERFACES FOR EXCITONIC SEMICONDUCTORS

摘要

Provided is a thin film semiconductor device that exploits exci tonic characteristics of various organic semiconductor materials. The device may include an anode (120), a cathode (170), and a donor-acceptor heterojunction (150) disposed between the anode and the cathode. The donor-acceptor heterojunction may further include an acceptor material (404) having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), and a donor material (402) comprising a hybrid organic-inorganic metal halide perovskite semiconductor. Other embodiments are disclosed and additional embodiments are also possible.