Se离子束辅助沉积 CIS过程的数值分析

摘要

通过研究连续Se离子束辅助磁控溅射技术，在柔性聚酰亚胺基底上沉积形成CIS薄膜的过程，建立了相应的薄膜沉积模型。在此基础上，以离子注入深度效应作为研究对象，从扩散均匀性角度进行模拟计算，并与传统气相原子沉积方法进行比较。通过比较分析，计算出Se扩散均匀性为90％时，采用离子束辅助沉积所需的衬底温度明显低于气相原子沉积所需的衬底温度。%Based on the formation ofCIS thin film on a flexible polyimide substrate by Se Ion Beam AssistedMagnetron sputtering technology , a model of the deposit is established .By comparing with the method of conventional gas phase atomic deposition, using ion implantation depth effect as the research object, a calculation method from the perspective of diffusion uniformity is put forward.Through comparison and analysis, when the Se diffusion uniformity is 90%, the substrate tempera-ture needed for ion beam assisted deposition was significantly lower than the substrate temperature needed for gas phase atom-ic deposition.