基于关键路径与改进遗传算法的最佳占空比求解

摘要

纳米工艺下,负偏置温度不稳定性(NBTI)成为影响电路老化效应的主导因素.多输入向量控制(M-IVC)是缓解由于NBTI效应引起电路老化的有效方法,而M-IVC的关键是最佳占空比的求解.在充分考虑时序余量的设计与电路实际操作情况下,对电路采用了静态时序分析,精确定位电路中关键路径.对关键路径采用改进的自适应遗传算法求解最佳占空比.实验结果表明:在时序余量为5%时,电路的平均老化率相比现有方案降低了1.49%,平均相对改善率为18.29%.%Under the nanometer process,the negative bias temperature instability (NBTI) is the dominant factor affecting the aging effect of the circuit. Multi input vector control (M-IVC) is an effective method to mitigate the NBTI effect,and the key to M-IVC is the solution of the optimal duty cycle. After fully considering the original design of the time margin and the actual operation of the circuit,the static timing analysis is used to accurately locate the critical path in the circuit. The improved adaptive genetic algorithm is used to solve the critical path for the best duty cycle. The experimental results show that when the time margin is 5%,the average aging rate of the circuit is reduced by 1. 49% compared with the existing scheme,and the average relative improvement rate is 18. 29%.