多晶硅化学气相沉积数值模拟的研究进展

摘要

介绍了多晶硅气相沉积反应的几何模型和数学模型。回顾了多晶硅沉积反应机理的研究成果。重点综述了近几年国内外还原炉内SiHCl3-H系统三维过程数值模拟的研究进展，并对其评述。讨论了化学气相沉积数值模拟的研究现状和存在的问题,，展望了今后的发展方向。%The geometric and mathematical model of chemical vapor deposition numerical simulation was introduced. The process of CVD mechanism was generalized. The research progress about chemical vapor deposition numerical simulation at present was sum-marized. The advantage and disadvantage was reviewed. Existed problems and possible future developments were reviewed in detail.