γ射线辐照实现聚碳硅烷基树脂较低温度下固化

摘要

通过小剂量γ射线辐照预固化，抑制热固化缺陷，改善聚碳硅烷基树脂固化行为，分析了不同辐照剂量对聚碳硅烷基树脂体系固化反应的影响，探讨了γ射线辐照降低聚碳硅烷基树脂的固化温度行为。采用γ射线辐照和热重－差示扫描量热法、红外光谱法等探讨了γ射线辐照树脂的反应机理。结果表明，聚碳硅烷基树脂经γ射线40 kGy的剂量辐照后，反应起始温度（ Ti ）降低了24．3℃，反应峰顶温度（ Tp ）降低了39．8℃；且放热峰变得尖锐、放热量大。γ射线辐照树脂主要引发CH CH2及少量的Si—H基团发生反应。%The effect of different γ-ray irradiation dosage on the curing reaction of the polycarbosilane resin was characterized, and the reaction mechanism ofγ-ray irradiated resin was explored.The curing process of polycarbosilane resin was studied by γ-ray irradiation and thermogravimetry-differential scanning calorime-try, infrared spectroscopy.Results indicate that the curing starting temperature Ti of the polycarbosilane resin after γ-ray 40kGy irradiation reduces 24.3℃and the peak temperature Tp reduces 39.8℃.The reaction tends to be violent and the reaction exothermic peak area becomes larger.γ-ray irradiated resin is cured mainly via Si—H and—CH CH2 reaction.