基于Preisach的MFIS结构器件C-V模型的改进

摘要

Considering the history-dependent electric field effect, Preisach model which describe the dipole switching is introduced into metal-ferroelectric-insulator-semiconductor (MFIS) structure, and is combined with Charge-sheet model of MOS structure.By this way, the C- V model of MFIS structure is improved.Finally, the improved model is used and compared with the experiment, and simulation results show that the improved model can predict the C-V characteristic and memory window of MFIS structure more consistently with the experimental data.%考虑历史电场效应,将描述铁电层矫顽电场分布的Preisach模型引入MFIS结构,和传统的MOS结构器件电荷薄片模型结合,对MFIS结构的C-V模型进行改进.为验证模型的有效性,与文献中的实验数据进行比较.结果表明,改进模型能够很好地与实验数据吻合,可以被用来描述MFIS结构器件的C-V特性及记忆窗口.