一种具有高存储容量的交互式忆阻交叉阵列

摘要

基于忆阻的存储阵列有望取代现有的计算机存储系统,但其漏电流及路径问题仍然会对存储容量与效率产生较大影响.漏电流问题的严重性会随着存储阵列容量的增大而愈发明显;阵列规模越大,漏电流路径也随之增多.基于二极管的单向导通性和自适应读操作方法,提出一种具有高存储容量的交互式忆阻交叉阵列.实验仿真结果表明,该阵列结构在减少控制纳米线的同时,能够增大阵列的存储容量;并能有效解决漏电流问题.%Although memristor-based crossbar memory array is deemed to be an alternative to existing computer memory systems, the sneak paths and routing problem in the crossbar array has a great effect on memory capacity and efficiency.The seriousness of sneak paths problem is obviously existed with the increase of memory array capacity.The larger the array, the more the number of sneak paths present.Based on the study of diode unidirectional sneak current conductivity and the adaptive read method in the memory reading operation, this paper presents a novel interactive crossbar array structure with high memory capacity.The experimental and simulation results indicate that the array structure can be used to solve the sneak paths problem with fewer control wires and higher memory capacity.