Effects of indium doping concentration on the morphology and electrical properties of one-dimensional SnO2 nanostructures prepared by a molten salt method

著录项

• 来源
  《中国科学》 |2012年第9期|P.1599-1603|共5页
• 作者

  WANG Dan; CHEN GuoNan; GONG MengLian;

  展开▼
• 作者单位

  ^pLaboratory;

  of;

  Analysis;

  and;

  Detection;

  for;

  Food;

  Safety;

  of;

  Ministry;

  of;

  Education,;

  Fujian;

  Provincial;

  Key;

  Laboratory;

  of;

  Analysis;

  and;

  Detection;

  for;

  Food;

  Safety;

  and;

  Department;

  of;

  Chemistry,;

  Fuzhou;

  University,;

  Fuzhou;

  350002,;

  China;

  ^pof;

  Pharmacy,;

  Guangdong;

  Pharmaceutical;

  University,;

  Guangzhou;

  510006,;

  China;

  ^pKey;

  Laboratory;

  of;

  Optoelectronic;

  Materials;

  and;

  Technologies,;

  School;

  of;

  Chemistry;

  and;

  Chemical;

  Engineering,;

  Sun;

  Yat-sen;

  University,;

  Guangzhou;

  510275,;

  China;

  展开▼
• 原文格式 PDF
• 正文语种 CHI
• 中图分类 TN383.1;
• 关键词

  纳米结构; 掺杂浓度; 二氧化锡; 电气性能; 铟掺杂; 熔盐法; 制备; 一维;