Intrinsic superconducting transport properties of ultra-thin Fe_（1＋y）Te_（0：6）Se_（0：4） microbridges

著录项

• 来源
  《中国科学》 |2017年第11期|P.76-80|共5页
• 作者

  HanCong Sun12; YangYang Lv1; DaChuan Lu1; ZhiBao Yang1; XianJing Zhou12; LuYao Hao12; XiangZhuo Xing3; Wei Zou3; Jun Li1; ZhiXiang Shi3; WeiWei Xu1; HuaBing Wang12; PeiHeng Wu14;

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• 作者单位

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

  [1]Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093, China [2]National Institute for Materials Science, Tsukuba 3050047, Japan [3]Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China [4]Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;

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• 原文格式 PDF
• 正文语种 CHI
• 中图分类 结型场效应晶体管;
• 关键词

  超导性能 传输性 金属-绝缘体转变 电流-电压特性 本征 超导电子器件 温度依赖性 平面电阻;