In a general aspect, a method can include forming a first pillar of a first conductivity type and a second pillar of a second conductivity type, alternately disposed with the first pillar. The second pillar can be in direct contact with the first pillar. The method can also include forming an implant of the second conductivity type in an upper portion of the second pillar. The implant can have a doping concentration that is higher than a doping concentration of a lower portion of the second pillar. The method can further include forming a Schottky metal layer having a first portion directly disposed on an upper surface of the first pillar and a second portion directly disposed on the implant along an upper surface of the second pillar. The first portion of the Schottky metal layer can be wider than the second portion of the Schottky metal layer.
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