Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

摘要

Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1 μm gate-length, 10 nm recessed-gate depth, 4 μm distance of source and drain ex-hibit a maximum drain current of 233 mA/mm at 1.5 V, a maximum transconduc-tance of 210 mS/mm, and a threshold voltage of 0.12 V. The threshold voltage of these devices increased to 0.53 V after 500 ℃ 5 min annealing in N2 ambient. The saturation drain current and transconductance of 15 nm recessed-gate depth re-duced compared to those of 10 nm recessed-gate depth, but the threshold voltage increased to 0.47 V. The relations between threshold voltage, controlling ability of gate and recess depth were validated by testing C-V structures on AlGaN/GaN het-erostructures with different etching depth.