Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/…/Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500℃ N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing resid- ual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.
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