Kinetic Study on Uniformity of AlGaAs Grown by MOVPE

摘要

The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs ( R AlGaAs ) in the flow direction is related to both the gas depletion and the decreasing growth rate of GaAs ( R GaAs ) with the increasing gas temperature in this direction. The change of x in the flow direction has relations not only to the different changes of R GaAs and R AlAs (the growth rate of AlAs) with the gas temperature, according to which x will increase in the flow direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x will decrease. Due to the similar reason, the loss of symmetry about the length axis of the susceptor can also result in the monotone increase or decrease in thickness and x in the crosswise direction.