Inhomogeneous strain and doping of transferred CVD-grown graphene

摘要

Chemical vapor deposition(CVD)-grown graphene on copper foils is subject to the Cu substrate, which affects the spatial distribution of strain and doping, thus influencing the electronic properties of graphene. However, plenty of electronic devices based on CVD-grown graphene require transfer process and the distribution of doping and strain in CVD-grown graphene transferred onto the insulating substrates remains elusive.