The present invention relates to phorene graphene formed as a semiconductor which has a bandgap and can quickly switch (ON/OFF) between an insulating state and a conductive state, and to magnetic-graphene, phosphorene, and phorene graphene (powder, molded article, aerogel). The phorene graphene is obtained by attaching graphene to phosphorene, thereby having characteristics of graphene and phosphorene such as excellent electrical conductivity, thermal conductivity, elasticity, and mechanical strength. The magnetic-graphene, phosphorene, and phorene graphene are formed by attaching and mixing nano-sized magnetic particles (iron oxide, ferrite, alloy) to graphene and phosphorene or phorene graphene, thereby having characteristics of nano-sized magnetic memory and constituting ultra-high integrated nonvolatile memory devices which can save vast amount of data with a fast operating speed and non-volatility.;COPYRIGHT KIPO 2016
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