SiC MOSFET特性分析及驱动电路研究

摘要

对比碳化硅(SiC)与硅(Si)的材料特性差异,分析基于不同材料金属氧化物半导体场效应晶体管(MOSFET)的电气特性,仿真得到其开关轨迹.提出一种有关驱动电阻对于开关过程影响的分析模型.论述研究了将SiCMOSFET应用于单管功率变换器、桥式功率变换器及双管正激变换器等典型电路时适用的驱动电路,针对桥式电路中存在的串扰问题进行了分析,使用LTSpice软件对4种优化后的驱动电路进行仿真并比较其优缺点,提出几点关于驱动电路的布局技巧.%The differences in material properties of silicon carbide (SiC) and silicon (Si) are compared.The electrical characteristics of metal-oxide-semiconductor field-effect transistor(MOSFET) based on SiC and Si are analyzed and a drive resistance analysis model about switching process is proposed.Then SiC MOSFET drive circuits applied to some typical converters are researched.In addition,the crosstalk problem in the bridge circuit is analyzed.Finally the four optimized drive circuits are simulated by LTSpice software,their advantages and disadvantages are compared and some key tips about layout design of SiC MOSFET drive circuit are proposed.