压接型IGBT器件绝缘研究:问题与方法

摘要

按绝缘失效模式,将压接型绝缘栅双极型晶体管(IGBT)的绝缘问题分为漏电和放电问题.借鉴电力电子学科研究范式,提出从绝缘测试、物理分析和可靠设计3个维度进行压接型IGBT器件绝缘研究的方法.同时,分别从这3个维度对压接型IGBT器件绝缘研究现状进行分析.最后,根据绝缘测试要求和物理分析参数,给出压接型IGBT器件绝缘优值,为压接型IGBT器件绝缘可靠设计提供了量化指标.%According to insulation failure modes of insulated gate bipolar transistor(IGBT), the problems could be divided into leak current and electrical discharge problems. Referring to the research paradigms of power electronics, the methodologies for insulation research of press pack IGBT are proposed, which include insulation test,physical analysis and reliable design. Meanwhile, the researches on insulation of press pack IGBT are analyzed from the three dimensions of the methodologies. Finally,from the requirements of insulation tests and the parameters of physical analysis, the figure of merit for insulation of press pack IGBT is defined,which provides a quantitative indicator for reliable insulation design of press pack IGBT.