Design and fabrication of Si LED with the N-well-P^+ junction based on standard CMOS technology

摘要

A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs' emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.