双极晶体管的瞬时中子辐射损伤规律试验研究

摘要

Background: The transient neutron radiation damage effect was an important parameter for evaluating radioresistance of electron device. Purpose: The aim is to obtain the response to transient irradiation of bipolar transistors under pulse neutron radiation. Methods: In this paper, the silicon bipolar transistors (3DK9D) with good similarity of parameters have been employed as the displacement damage monitors based on the liner relationship between the reciprocal of gain and the neutron flux. Response characteristic of pulse neutron radiation for this transistor was obtained by on-line measuring the variation of zero-frequency gain the along with accumulation of the neutron flux. Results: The transient neutron radiation damage effect on transistors was the combined action of ionizing damage and displacement damage. Conclusion: The results shown that the transient irradiation effect of transistors was more remarkable than steady irradiation with the same accumulative neutron flux.%瞬时中子辐射损伤效应是评价电子器件抗辐射能力的一项重要指标。利用晶体管直流增益的倒数与中子注量呈线性关系这一特点，采用参数一致性好的硅双极晶体管3DK9D 作为位移损伤探测器，通过在线监测晶体管直流增益随累积中子注量的变化，获得了双极晶体管对脉冲中子辐照的响应特性。结果表明，晶体管的瞬时辐射效应是电离损伤和位移损伤共同作用的结果。在相同累计中子注量下，瞬态辐照损伤效应远强于稳态辐照损伤结果。