非均匀a-Si:H层的光致发光光谱研究

摘要

本文报道了沉积于玻璃基板上的a-Si:H基结构在6K下测定的光致发光光谱.认为其非高斯特性是由材料中的不同相引起的.由光谱拟合获得的数值数据结果显示,它们可以认为是两种有不同结构无序化度区域的光致发光叠加的结果.这是沉积过程的问题,相当于无定形氢化硅结构性能的理想情况.%Photoluminescence spectra of a-Si: H-based structures deposited on glass substrate measured at 6K are presented. Their non-Gaussian character is interpreted as a result of presence of different phases in material. Presented results of analysis of numerical data obtained by fitting of these spectra indicates that they can be represented as a consequence of superposition of photoluminescence signal arising from two types of domains with different degrees of structural disordering. This is the issue of deposition process and corresponds to real situation from view of structural properties of amorphous hydrogenated silicon.