首页> 中文期刊>材料导报 >α-六噻吩OTFT器件痕量NO2气体传感器的制备及特性研究

α-六噻吩OTFT器件痕量NO2气体传感器的制备及特性研究

     

摘要

Three kinds of organic thin-film transistors (OTFT) with different ratios of channel width to length were fabricated, α-rsexithiophene (α-6T) and silicon dioxide (SiO2) were used as the active layer and the insulating layer, respectively, titanium/aurum (Ti/Au) were made as the electrode for the prepared OTFT,and the three ratios of channel width to length were 40, 160 and 640. The influences of α-6T OTFT devices of different channel ratios on gas sensitive properties were discussed. The results showed that the α-6T based OTFT had good real-time response to NO2, the ratio of channel width to length had effect on gas response, the response sensitivity became higher and response time became longer when the ratio of channel width to length increased, and a device with a ratio of channel width to length of 160 exhibited the optimum gas sensing property.%以α-六噻吩(α-sexithiophene,α-6T)为有源层,二氧化硅(SiO2)为绝缘层,钛/金(Ti/Au)为电极,分别制备了沟道宽长比为40、160和640的有机薄膜晶体管(Organic thin-film transistors,OTFT)器件.讨论了OTFT器件的宽长比对二氧化氮气敏性能的影响.结果表明,基于α-6T的OTFT器件对二氧化氮气体具有较高的实时响应;OTFT器件对二氧化氮气体的气敏性能与沟道宽长比有依赖关系,随着沟道宽长比的增大,器件的响应灵敏度提高、响应时间延长,宽长比为160的器件气敏性能最佳.

著录项

  • 来源
    《材料导报》|2012年第22期|16-19,34|共5页
  • 作者单位

    电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054;

    电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054;

    电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054;

    电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都610054;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 TP212.2;
  • 关键词

    沟道宽长比; 有机薄膜晶体管; 二氧化氮; 灵敏度;

  • 入库时间 2022-08-17 16:21:22

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