采用磁控反应共溅射法制备了Ta-Al-N纳米薄膜及Cu/Ta-Al-N/Si结构,并在氮气保护下对薄膜进行了快速热处理,用四探针电阻测试仪、台阶仪、原子力显微镜、X射线衍射、X射线光电子能谱、扫描电镜等对薄膜进行了表征.研究表明,少量Al的掺入可降低薄膜的表面粗糙度,有效提高其热稳定性和Cu扩散阻挡能力,但同时也增大了薄膜的电阻率.Al原子分数为1.7％、厚约100nm的Ta-Al-N薄膜在800℃热处理5min后仍可保持稳定和对Cu扩散的有效阻挡,其作用机制与Al填充堵塞晶界及提高薄膜的晶化温度有关.%Nanometer Ta-Al-N thin-films and Cu/Ta-Al-N/Si multilayer structures were prepared by RF magnetron reactive ccrsputtering. The samples were rapid annealed at different temperatures form 300℃ to 900℃ in N2 ambience for 5min. Four-point probe, surface profilers, atomic force microscope( AFM), X-ray diffraction(XRD) , X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM) were employed to characterize the properties of the films. The results indicated that the addition of Al can make the film smooth, improve the thermal stability and Cu diffusion barrier ability effectively, but increase the resistance at the same time. After annealing at 800℃ for 5min, the 100nm thick films with 1.7% Al (atom ratio) can keep stable, Cu diffusion phenomena was not observed. This can be considered that the Al atoms stuffed the grain boundaries and increased the crystal temperature.
展开▼
