室温下通过直流磁控溅射Al2O3掺杂3％(质量分数)的ZnO靶材制备了厚度约1μm、结晶度高、表面平整光滑的ZnO∶Al透明导电薄膜.研究盐酸、王水和草酸溶液对ZnO∶Al薄膜的湿化学刻蚀行为,分析刻蚀对薄膜微观结构、光刻图案、电学和光学性能的影响.结果表明,刻蚀对薄膜的结晶取向性无影响；经盐酸、王水和草酸刻蚀后薄膜的电阻率略有增大,从7.4mΩ·cm分别增大到8.7mnΩ· cm、8.8mQ·cm和8.6mΩ·cm；透光率略有下降,从80％分别下降到76％、77％和78％.0.5％的盐酸刻蚀可以获得结构良好的陷光结构.薄膜在盐酸中刻蚀速率快,易产生浮胶；在草酸中刻蚀图案清晰,但存在残留；在王水中刻蚀图案清晰且无残留.%Smooth and crystalline ZnO ! Al transparent conductive oxide films with a thickness of about Ijim were prepared by direct current magnetron sputtering with a 3% Al2Qj doped ZnO target. Wet etching behaviors of ZnO ! Al films were investigated using hydrochloric acid, aqua regia and oxalic acid. The microstructure, patterns, electrical and optical properties of ZnO ! Al films after etching were studied The results show that the orientation of crystallization is not change by wet etching. Wet etching has no significant influence on resistivity and transmittance, the resistivity of films increased from 7. 4mn ? Cm to 8. 7mn ? Cm, 8. 8mfl ? Cm and 8. 6mfl ? Cm, and the transmittance decreased from 80% to 76%, 77% and 78% after etching. The texture surface with light trapping structure can be obtained from smoothed ZnO ! Al films by 0. 5 % hydrochloric acid etchant. The etching rate in hydrochloric acid is fast, and the photoresist film can be easily detached from the substrate surface. The patterns etched by oxalic acid are clear, but with residues. The etching patterns in aqua regia are clear and no residues.
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