氮化铟薄膜的p型掺杂和铁磁性研究进展

摘要

Ⅲ族氮化物半导体材料(InN、GaN、AlN)由于能带结构的特殊性,使其在光电器件与微波等领域得到广泛应用.其中,研究和发展InN材料及器件已被公认是占领光电信息技术领域战略至高点的重要途径,InN材料的p型导电以及室温铁磁性研究更是成为Ⅲ族氮化物中新颖的研究课题.首先简单介绍InN的晶体结构和制备方法,并分析其目前所遇到的挑战,然后重点阐述国际上关于InN在p型掺杂以及铁磁性领域的研究进展,同时介绍本课题组在该方面的研究,最后进行了简要总结和展望.%Ⅲ-nitride (InN, GaN and AlN) semiconductors have been widely used in the field of microwave and optoelectronic devices due to their unique band structure and properties.Among them, the researches and developments on InN-based materials and devices have been recognized as the key points to promote the modern optoelectronic technology.Moreover, extensive new fundamental studies have been focused on p-type conduction and room temperature ferromagnetism studies in InN.This paper first gives a brief introduction to the crystal structure and the growth methods of InN film, and analyze the challenges encountered in its development.Then we mainly concentrate on the recent development in InN research about p-type conduction and ferromagnetism.At the same time, the related researches studied in our group are presented.Finally, a short conclusion and expectation is given.