一种低温共烧压电陶瓷的制备

摘要

In this research, piezoelectric ceramic multilayers based on 0.90Pb （Zr0.4s Ti0. 52 ） 03-0. 05Pb （ Mn1/3 Sb2/3 ） 03- 0. 05Pb（ Zn1/3 Nb2/3 ）03 quaternary system with silver inner electrodes have been successfully prepared. The process of tape casting, sintering, and poling are intensively investigated. The sintering temperature for the muhilayers has been lowered to 850 ~C by using CuO as the additive. High density is obtained in the multilayer structures even at this low sinte- ring temperature. The piezoelectric measurements display that the ceramic with 3 layers presents piezoelectric coefficient d33 of 873pC/N, which is almost linear with the d33 value of 306 pC/N of the monolayer ceramic. The fabricated ceramic multilayers can be beneficial to the integration of the piezoelectric devices.%压电陶瓷多层膜的低温共烧特性及压电性能密切依赖于其成分。采用调节压电材料成分，以0．90Pb（zr048Ti0.52）03—0．05Pb（Mnl／3Sb2／3）03-0．05Pb（Zn1/3Nb2／3）03四元体系为研究对象，同时添加烧结助剂CuO来实现多层膜的低温烧结。对多层膜的流延、排胶、烧结、极化等工艺进行探索以优化工艺参数，最终获得850oC烧结温度下的高致密度多层压电陶瓷。压电性能的测试表明三层结构的压电多层膜陶瓷表观d33达873pC／N，远高于同成分单层陶瓷306pC／N的d33值。采用多普勒激光测振仪进行扫频实验，测定了多层陶瓷纵向振动速度的频谱，确定了基于该多层膜压电振子的最优谐振频率。