近红外1550 nm 单光子探测器硬件电路设计

摘要

As the existing single photon detector is usually expensive and bulky,a hand-held single photon detector based on InGaAs/InP avalanche photo diode(APD)is designed.The circuit program of temperature control and bias voltage is given,and the gating signals are generated and avalanche signals are extracted by FPGA.The experimental results show that:dark count rate(DCR)of the single photon detector is only 8.2 ×1 0 -6 s when photon detection ef-ficiency is 1 2%,and the maximum photon detection efficiency of 1 6% is obtained at temperature of -55 ℃ and ga-ting signals of 200 MHz.%针对现有单光子探测器模块价格昂贵和体积大的不足，设计了基于 InGaAs／InP 雪崩光电二极管（APD）的便携式单光子探测器，给出了探测器温控模块和偏置电压源的设计电路，门控信号的产生和雪崩信号的提取由 FPGA 完成。实验结果表明：在200 MHz 门控条件且制冷温度为－55℃时，探测器的最大光子探测效率（PDE）约为16％，当探测效率为12％时，暗计数率（DCR）约为8．2×10－6／ns。