碲镉汞材料双面平坦化工艺研究

摘要

通过对30 mm×25 mm尺寸的碲镉汞材料和器件进行双面平坦化工艺,使其平面度达到与Si读出电路互连要小于2 μm的要求,提高了MW1280×1024焦平面器件互连成品率.%The HgCdTe material with the size of 30 mm×25 mm is processed by the double-surface flattening process.After processing,the total thickness variation(TTV) is lower than 2 μm,which meets the demand of Si ROIC flip chip,and the flip chip bonding yield of MW1280×1024 focal plane arrays(FPA) is remarkably improved.