Bipolar Resistive Switching Effect in BiFeO_3/Nb:SrTiO_3 Heterostructure by RF Sputtering at Room Temperature

摘要

The(001) oriented BiFeO_3 thin film was deposited on the Nb: SrTiO_3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO_3/Nb: SrTiO_3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of-0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.