一种高电源抑制比和高精度带隙电压源设计

摘要

This paper describes the design of a bandgap reference circuit with high Power Supply Rejection Ratio(PSRR) and high precision. The circuit can output a reference voltage of 1.2 V and bears a temperature coefficient of 9.89.8×10-6℃-1between -40 ℃ and 80℃ . The circuit features high PSPR, simple circuit structure and excellent matching performance by using a negative-feedback loop and reducing the coupling capacitance. The correctness of the circuit design is verified through the simulation in Hspice. The circuit can be widely used in the integrated circuits working under harsh power environment.%介绍了一种BiCMOS工艺制作的高电源抑制比和高精确度的带隙基准电压源,其输出电压为1.2V,在-40 ℃～80℃范围内有较好的温度特性,温度漂移系数为9.8×10-6℃-1.采用电压负反馈原理和减少耦合电容的方法,使电路具有高的电源抑制比,并且电路结构简单,匹配性好.采用Hspice工具对电路进行了仿真,验证了设计的正确性.该电路能广泛用于在电源环境恶劣的场合下工作的集成电路中.