自旋转换配位聚合物——新型分子存储材料探索

摘要

论述了dn(4≤n≤7)过渡金属配合物的自旋转换现象的原理和表征方法以及可能作为分子基信息存储(记忆)材料的自旋转换配合物的条件。介绍了国内外研究状况及展望。%In this paper we expounded the principle of spin-transition between a low-spin and a high spin state on some 3dn(4≤ n ≤ 7) transition metal compounds, and recommended the characterization methods of the spin-transition behaviors. Also we discussed the conditions of the polymers which can become memory materials and briefed the present situation and prospect in this area.