MMVCX光伏型HgCdTe中波探测器暗电流温度特性

摘要

研究了光伏型HgCdTe中波探测器的暗电流与烘烤时间的关系特性.编写了一种适用于n-on-p型的中波HgCdTe红外探测器的解析拟合程序.结合暗电流的主导机制有扩散机制、产生复合机制、带间直接隧穿机制和陷阱辅助隧穿机制.通过对样品不同烘烤时间的R-V曲线的解析拟合,得到了它们的暗电流成分,提取了6个特征参数.通过对比不同烘烤时间特征参数的变化,分析了烘烤对器件的影响.%In this paper,we studied the relationship between dark current and baking time of mid-wavelength HgCdTe infrared photovoltaic detector.A simultaneous-mode nonlinear fitting program for n-onp mid-wavelength HgCdTe infrared detector is reported.The curve-fitting model includes the diffusion,generation-recombination,band-to-band tunneling and trap-assisted tunneling current as dark current mechanisms.The dark current components and six characteristic parameters were obtained from the fitting of resistance-voltage(R-V) curves measured before and at different annealing time.The effects of annealing on the performance of the photodiodes were analyzed by comparing the characteristic parameters of devices at different annealing time.