首页> 中文期刊> 《湖北大学学报(自然科学版)》 >Y2O3掺杂对BaZrxTi1-xO3陶瓷介电性能的影响

Y2O3掺杂对BaZrxTi1-xO3陶瓷介电性能的影响

         

摘要

研究BaZrxTi1-xO3 (x=0,0.1,0.2,0.3)陶瓷中掺杂0.1%(按物质的量计算,下同)Y2O3对铁电-顺电相变温度的影响.发现0.1%Y2O3的掺杂使BaTiO3的铁电-顺电相变的居里温度向高温偏移了约20℃,不同Zr含量的样品也发生了一定程度的高温偏移.在-40℃到140℃的测量温度范围内介电频率弥散现象极弱,峰值介电常数可以达到8000,损耗峰值为0.05以下.随Zr含量的增加,损耗峰快速移向低温.与文献报道的结果比较,证实Y以A位替代Ba为主.%Influences of 0. 1% Y2O3 dopant on dielectric properties of BaZrχTi1-χO3 (χ = 0,0. 1, 0. 2,0. 3) ceramics were investigated. The curie temperature of 0. 1%Y2O3 doped BaTiO3 ceramics was about 20 ℃ higher than that of pure BaTiO3. The curie temperatures of 0. 1% Y2O3- BaZrχTi1-χO3(χ=0,0. 1,0. 2,0. 3) ceramics were also increased in some extent. In the measuring temperature region of -40 ℃ to 140 ℃, the peaks of dielectric permittivity of the ceramics kept high value of 8 000 with the low frequency dispersion, and the peaks of dielectric loss was less than 0. 05. With the increase of Zr content, the peaks of dielectric loss moved to low temperature quickly. Comparing with the reported result, it was confirmed that Y ions was mainly occupied A-site to substitute Ba ions.

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