首页> 外文期刊>Journal of Electronic Materials >Effects of Ta2O5/Y2O3 Codoping on the Microstructure and Microwave Dielectric Properties of Ba(Co0.56Zn0.40)(1/3)Nb2/3O3 Ceramics
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Effects of Ta2O5/Y2O3 Codoping on the Microstructure and Microwave Dielectric Properties of Ba(Co0.56Zn0.40)(1/3)Nb2/3O3 Ceramics

机译:Ta2O5 / Y2O3共掺杂对Ba(Co0.56Zn0.40)(1/3)Nb2 / 3O3陶瓷微观结构和微波介电性能的影响

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摘要

The effects of Ta2O5/Y2O3 codoping on the microstructure and microwave dielectric properties of Ba(Co0.56Zn0.40)(1/3)Nb2/3O3-xA-xB (A = 0.045 wt.% Ta2O5; B = 0.113 wt.% Y2O3) ceramics (x = 0, 1, 2, 4, 8, 16, 32) prepared according to the conventional solid-state reaction technique were investigated. The x-ray diffraction (XRD) results showed that the main crystal phase in the sintered ceramics was BaZn0.33Nb0.67O3-Ba3CoNb2O9. The additional surface phase of Ba8CoNb6O24 and trace amounts of Ba5Nb4O15 second phase were present when Ta2O5/Y2O3 was added to the ceramics. The 1:2 B-site cation ordering was affected by the substitution of Ta5+ and Y3+ in the crystal lattice, especially for x = 4. Scanning electron microscopy (SEM) images of the optimally doped ceramics sintered at 1340A degrees C for 20 h showed a compact microstructure with crystal grains in dense contact. Though the dielectric constant increased with the x value, appropriate addition would result in a tremendous modification of the Q x f and tau (f) values. Excellent microwave dielectric properties (epsilon (r) = 35.4, Q x f = 62,993 GHz, and tau (f) = 2.6 ppm/A degrees C) were obtained for the ceramic with x = 0.4 sintered in air at 1340A degrees C for 20 h.
机译:Ta2O5 / Y2O3共掺杂对Ba(Co0.56Zn0.40)(1/3)Nb2 / 3O3-xA-xB(A = 0.045 wt。%Ta2O5; B = 0.113 wt。%)的微观结构和微波介电性能的影响研究了根据常规固态反应技术制备的Y2O3)陶瓷(x = 0、1、2、4、8、16、32)。 X射线衍射(XRD)结果表明,烧结陶瓷的主晶相为BaZn0.33Nb0.67O3-Ba3CoNb2O9。当向陶瓷中添加Ta2O5 / Y2O3时,会出现Ba8CoNb6O24的额外表面相和痕量的Ba5Nb4O15第二相。 1:2 B位阳离子的有序性受到晶格中Ta5 +和Y3 +的取代的影响,尤其是对于x =4。在1340A摄氏度下烧结20 h的最佳掺杂陶瓷的扫描电子显微镜(SEM)图像显示紧密的微观结构,晶粒紧密接触。尽管介电常数随x值增加,但适当的相加将导致Q x f和tau(f)值发生巨大变化。对于x = 0.4的陶瓷,在空气中在1340A的温度下烧结20 h,获得了优异的微波介电性能(ε(r)= 35.4,Q xf = 62,993 GHz,tau(f)= 2.6 ppm / A摄氏度) 。

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