在单晶Si基片用离子束溅射沉积法制备了1～100nm的Al2O3纳米薄膜.利用原子力显微镜分析和研究了不同厚度Al2O3纳米薄膜的表面形貌,并用X射线光电子能谱(XPS)仪和X射线衍射仪分别对100 nm的Al2O3纳米薄膜表面结构和成分进行了表征,结果表明:薄膜厚度在1～50 nm范围时,颗粒形态随着薄膜厚度的变化逐渐变化,由二维生长的胞状渐变为多个颗粒聚成的球状.当薄膜厚度大于50nm时,小的球形颗粒聚成大球形颗粒,并且球形颗粒生长状态为三维生长.随着薄膜厚度的增加表面粗糙度先增加后减小,当薄膜厚为5 nm时出现最大值;在衬底温度低于100℃的条件下,沉积在基片上的纳米薄膜为非晶态,纳米颗粒为无方向性沉积,颗粒呈团球状,其成分基本满足Al2O3的标准成分配比.%The Al2O3 nano-films of different thickness (1 ～ 100 nm) were successfully deposited on the monocrystalline silicon surface. Atomic force microscope had been applied to study the surface topography and quality of Al2O3 nanofilms of different thickness and the microstructurc and composition of Al2O3 nano-films of 100 nm had been characterized by X-ray photoelectron spectrum (XPS) and X-ray diffraction analyses separately. It was found that the deposited grain morphology transformed from acerose cellula by two-dimensional growth to globular aggregates of grains with film thickness increasing when the films thickness was 1～50 nm. When film thickness was 5nm, the film had maximal roughness, which then decreased with the film thickness increasing. The amorphous Al2O3 nano-films with stuiehiometrie composition and microspberie structure formed due to random deposition of nano-particles were obtained by ion beam sputtering deposition at temperature below 100 ℃.
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