Co2O3掺杂对ZnO压敏电阻性能的影响

摘要

The ZnO varistor valves with different contents of Co2O3 doped were prepared by means of conventional technology. The microstructure of ZnO samples was analyzed by scan ning electron microscopy ( SEM ) and X - ray diffraction ( XRD ). The effect of Co2 O3 dopant content on the microstructure of samples was studied, the relationship between electrical properties and contents of Co2O3 was discussed. The rasults showed that with the contents of Co2O3 increasing, the size of crystalline grain became smaller, the diffraction angle became larger, but the smaller of the interplanar distance; the sensitive voltage promote, the non -linear index became larger.%运用传统工艺制备不同质量分数Co2O3掺杂的ZnO压敏电阻阀片.采用扫描电镜和X射线衍射仪对样品的显微结构进行分析，研究了Co2O3掺杂质量分数对ZnO压敏电阻显微结构的影响，讨论了其电学性能与Co2O3掺杂摩尔分数的关系.结果表明，随着Co2O3摩尔分数的增大，晶粒尺寸越来越小，衍射角变大，晶面间距减小；压敏电压升高，非线性指数变大.