含硼金刚石与普通金刚石半导体性及抗氧化性比较

摘要

通过在铁基合金中加入硼粉的方法,制成含硼量0.2%(质量分数)的Fe-Ni-C-B系触媒,用静压法合成含硼金刚石.研究了普通金刚石和含硼金刚石的形貌、晶体结构、电阻-温度曲线和抗氧化性.实验表明,合成的含硼金刚石具有良好的半导体性,电离能ΔE=0.368eV;起始氧化温度比普通金刚石高185℃,耐热性明显改善.此方法为低成本、大批量的制备半导体金刚石提供了新的途径.%In present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst. The catalyst was made of iron-base alloy added boron powder and the boron weighs 0. 2%. The boron-doped diamonds were compared with ordinary diamonds on the morphology, crystal structure, resistancetemperature characteristic curve and oxidative stability. Experiments prove that the boron-doped diamonds are semiconductor materials, whose ionization energy is 0. 368eV; and initial oxidation temperature of boron-doped diamonds is 185 degrees celsius, which is higher than that of ordinary diamond.