Diamond semiconductor JFETs by selectively grown n^#x002B;-diamond side gates for next generation power devices

摘要

Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n⁺-type diamond growth, diamond junction field effect transistors (JFETs) were fabricated and operated from 223 to 573 K. JFETs show very low leakage currents in the 10⁻¹⁵ A range and a steep subthreshold slope (SS) of 81 mV/decade at room temperature. We confirm that the devices possess steep SS and low leakage current in the 10⁻¹⁴-10⁻¹⁵ A r a n ge s up to 423 K.