碘掺杂TiO_2薄膜电极制备和光电性能研究

摘要

以碘酸钾为碘源,钛酸丁酯为钛源,采用溶胶-凝胶法制备碘掺杂TiO2纳米粉体,采用旋涂法制成以ITO导电玻璃为基底的碘掺杂TiO2薄膜电极,并经300～600℃退火处理。采用XRD、XPS和紫外-可见吸收光谱等对样品微观结构、化学成分和光学特性进行表征,并对碘掺杂薄膜电极和纯TiO2薄膜电极的光电化学性能进行测定比较。结果显示少量碘掺入到TiO2,但经碘掺杂的TiO2紫外-可见光吸收限明显红移到可见光区（450～600nm之间）,碘掺杂TiO2薄膜电极经适当温度处理的光响应性比纯TiO2得到明显改善。%I-doped TiO2 nano-size powder was synthesized using sol-gel method,I-doped TiO2/ITO was prepared by spin-coating method,and annealed under the temperatures of 300-600℃.The microstructure,chemical composition and optical and of as-formed films were characterized by X-ray diffraction（XRD）,X-ray photoelectron spectroscopy（XPS）,and UV-Vis absorbance spectra.The photoelectrochemical property was tested by amperometric i-t curves of transient photocurrent generated under Xe light irradiation.The results showed that the absorbance edges of I-doped TiO2 were red-shifted to visible zones of 450-600nm and exhibited a noticeable photoelectrochemical property.