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Preparation and photoelectric properties of Pt/TiO_2 nanotube electrodes by a pre-doping method

机译:预掺杂法制备Pt / TiO_2纳米管电极及其光电性能

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摘要

A pre-doping method in which Pt nanoparticles (NPs) are introduced as dopants before the formation of a TiO2 nanotube (TNT) array was proposed in this paper. This method was intended to decorate a TNT array film with Pt nanoparticles (Pt/TNT), which effectively avoided the problem of blocking the top of the nanotubes by noble metal particles by post-doping methods. Pt/TNT array film was fabricated by anodizing the double Pt/Ti metal film, which was obtained by successive magnetron sputtering of Pt and Ti films onto FTO substrates. X-ray diffraction, X-ray photoelectron spectroscopy, and field emission scanning electron microscopy were used to characterize the microstructure of the Pt/TNT nanotubes array, which revealed that Pt NPs located at the bottom of the Ti film can diffuse into the upper TNT array film after anodization and annealing. Pt/TNT electrode exhibits a superior photoelectric property over that of TNT, of which the photocurrent value of the Pt/TNT electrode was more than twice that of the pure TNT electrode. It is therefore obvious that the pre-doping method is feasible and effective for fabricating a high-photocatalytic-efficient Pt/TNT electrode.
机译:本文提出了一种预掺杂方法,其中在形成TiO2纳米管(TNT)阵列之前引入Pt纳米颗粒(NPs)作为掺杂剂。此方法旨在用Pt纳米颗粒(Pt / TNT)装饰TNT阵列膜,从而有效避免了后掺杂方法通过贵金属颗粒阻塞纳米管顶部的问题。 Pt / TNT阵列膜是通过对双层Pt / Ti金属膜进行阳极氧化而制成的,该双层Pt / Ti金属膜是通过将Pt和Ti膜连续磁控溅射到FTO基板上而获得的。利用X射线衍射,X射线光电子能谱和场发射扫描电子显微镜来表征Pt / TNT纳米管阵列的微观结构,这表明位于Ti膜底部的Pt NP可以扩散到上部TNT中。阳极氧化和退火后的阵列膜。 Pt / TNT电极比TNT具有更好的光电性能,其中Pt / TNT电极的光电流值是纯TNT电极的两倍。因此,显然,预掺杂方法对于制造高光催化效率的Pt / TNT电极是可行和有效的。

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