硅基三元系PMnN—PZT铁电薄膜制备与研究

摘要

利用磁控溅射方法在单晶Si基底上沉积三元系铁电薄膜6％PMnN-94%5PZT（6％Pb（Mn1/3，Nb2／3）O3—94％Pb（Zr0.52，Ti0.48）O3），采用淬火方法对薄膜进行处理，以促进薄膜钙钛矿结构形成。同时，在相同条件下制备非掺杂PZT（52／48）薄膜以对比薄膜掺杂效果。运用X射线衍射（XRD）技术分析薄膜晶向及晶体结构，运用SawyerTower电路测试薄膜铁电性能，运用激光测振仪测试薄膜的压电系数。实验结果表明，所沉积薄膜为多晶钙钛矿结构铁电薄膜，薄膜铁电剩余极化Pr=23．7μC／cm2，饱和极化Ps=40μC／cm2，矫顽场电压2Ec=139kV／cm，横向压电系数e11=-13．2C／m2，薄膜的铁电及压电性能优良。%The ternary compound ferroelectric thin films, 6% Pb （ Mnl/3 , Nb2/3 ） O3-94 % Pb （Zr0.52, Ti0.48 ） 03, were deposited on the silicon substrates by the magnetron sputtering method, and the quench method was adopted for the post heat treatment for the perovskite phase. Besides, the non-doped PZT（52/48） thin films were also fab- ricated for comparisons with the same sputtering method. The X-ray diffraction was used to characterize the crystal structures of thin films, and the Sawyer Tower circuit was used to measure the ferroelectricity, and the laser vibration measurement system was used to measure the transverse piezoelectric coefficient of thin films. The results show that the PMnN-PZT thin films own perovskite structures, and the remnant polarization Pr = 23. 7μC/cm2 , the saturation polarization Ps=40μC/cm2 and the coercive electric field 2Ec=139kV/cm, and the transverse piezoelectric coefficient c31 = - 13. 2C/m2 , which identifies that the PMnN-PZT thin films own excellent ferroeleetricity and piezoelectricity.